PART |
Description |
Maker |
HY5DS573222F-28 HY5DS573222FP-28 HY5DS573222FP-36 |
GDDR SDRAM - 256Mb 256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM 128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
HY5DU643222AQ-4 HY5DU643222AQ-43 HY5DU643222AQ-5 H |
GDDR SDRAM - 64Mb
|
Hynix Semiconductor
|
HY5DU113222FM-2 HY5DU113222FM-22 HY5DU113222FM-25 |
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
K4D263238I-VC |
128M-Bit GDDR SDRAM
|
Samsung Electronics
|
HY5DU561622CTP-28 HY5DU561622CTP-33 HY5DU561622CTP |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
HY5DU281622ET HY5DU28162 HY5DU281622ET-4 HY5DU2816 |
128M(8Mx16) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
HY5DV281622DTP HY5DV281622DTP-33 HY5DV281622DTP-36 |
128M(8Mx16) GDDR SDRAM
|
Hynix Semiconductor
|
K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
|